Method of doping inpurities

Details Method of doping inpurities Method of doping inpurities

1976-01-14

1978-07-11

Weiffenbach, Cameron K.

Coating processes

Measuring, testing, or indicating

118 7, 427 85, 427 86, 427 95, 427248A, 427248B, 427248C, B05D 512

Patent

active

041003101

ABSTRACT:
In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

REFERENCES:
patent: 3370995 (1968-02-01), Lowery et al.
patent: 3419718 (1968-12-01), Hammond et al.
patent: 3434203 (1969-03-01), Thorp
patent: 3481781 (1969-12-01), Kern
patent: 3576670 (1971-04-01), Hammond
patent: 3682699 (1972-08-01), Koga et al.
patent: 3919968 (1975-11-01), Sandmann et al.
patent: 3924024 (1975-12-01), Naber et al.
Weiffenbach, C. K., et al., High-Temperature Equilibria from Plasma Sources, I. Carbon-Hydrogen-Oxygen Systems, In J. Phys. Chem., 73 (8):, pp. 2526-2531, Aug. 1969.

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