Method of doping impurities into sidewall of trench by use of pl

Details Method of doping impurities into sidewall of trench by use of pl Method of doping impurities into sidewall of trench by use of pl

1987-08-24

1989-08-29

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 38, 437 60, 437 67, 437165, H01L 21223

Patent

active

048617296

ABSTRACT:
A method in which in order to dope impurities, with excellent controllability, into a sidewall of a trench formed in a semiconductor substrate, plasma is generated in a gas including the impurities and the semiconductor substrate is disposed in or near the plasma, so that the impurities may be doped into the sidewall of the trench uniformly and at high precision of concentration control; wherein one of a duluted B.sub.2 H.sub.6 gas and diluted AsH.sub.3 gas is chosen as the gas of the plasma, whereby one of B and As as the impurities directly enters the sidewall of the trench without first passing through a film.

REFERENCES:
patent: 4466178 (1984-08-01), Soclof
patent: 4688064 (1987-08-01), Ogura et al.
patent: 4698104 (1987-10-01), Barker et al.

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