Method of doping IIb or VIb group elements into a boron phosphid

Details Method of doping IIb or VIb group elements into a boron phosphid Method of doping IIb or VIb group elements into a boron phosphid

1978-12-20

1980-07-29

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148174, 156605, 156613, 252 623GA, 427 85, 427 87, 357 16, 357 61, H01L 21205, H01L 29207

Patent

active

042149266

ABSTRACT:
A method of doping IIb or VIb group elements into a phosphide semiconductor comprising the steps of adding organic compounds of IIb group elements or hydrides of VIb group elements to a gas containing boron compounds selected from the group consisting of boron hydrides and boron halides and phosphorus compounds selected from the group consisting of phosphorus hydrides and phosphorus halides, in a ratio of 0.05-50 mol of said IIb group organic compounds or 10.sup.-4 -10 mol of said VIb group hydrides per mol of said boron compounds, and conducting vapor phase growing of the boron phosphide semiconductor at a growing temperature between about 850.degree. and 1100.degree. C.

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patent: 3877060 (1975-04-01), Shono et al.
Tietjen et al., "Preparation . . . Epitaxial GaAsP . . . Arsine and phosphine" J. Electrochem. Soc., vol. 113, No. 7, Jul. 1966, pp. 724-728.
Manasevit et al., "use of Metal-Organics . . . Semiconductor Materials"
Ibid., vol. 116, No. 12, Dec., 1969, pp. 1725-1732.
Burmeister et al., "Large Area Epitaxial Growth . . . GaAsP . . . " Trans. Metall. Soc. Aime, vol. 245, Mar. 1969, pp. 587-592.
Chu et al., "Growth of Boron Monophosphide . . . Technique" J. Crystal Growth, V. 33 (1976), pp. 53-57.

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