Method of doping a semiconductor layer

Details Method of doping a semiconductor layer Method of doping a semiconductor layer

1975-07-11

1976-07-06

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 91, H01L 21263

Patent

active

039679829

ABSTRACT:
A semiconductor layer, such as an epitaxial layer on a suitable substrate is subjected to controlled bombardment by neutrons whereby the atoms of the semiconductor layer are converted via nuclear reaction into doping material atoms.

REFERENCES:
patent: 3733222 (1973-05-01), Schiller
Davis et al., "Nucleon Bombarded Germanium Semiconductors, II," AECD-2054, Tech. Inf. Div., Oak Ridge Oper. AEC, 11/15/48.

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