Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge
Patent
1982-01-26
1983-07-12
Andrews, R. L.
Chemistry: electrical and wave energy
Processes and products
Electrostatic field or electrical discharge
C25D 500
Patent
active
043929281
ABSTRACT:
A method for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient.
REFERENCES:
patent: 4032418 (1977-06-01), Antula
Rapp Robert A.
Yang Chiang Y.
Andrews R. L.
Besha Richard G.
Gottlieb Paul A.
The United States of America as represented by the United States
Whisker Robert H.
LandOfFree
Method of doping a semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of doping a semiconductor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of doping a semiconductor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-197434