Method of doping a polysilicon layer on a semiconductor wafer

Details Method of doping a polysilicon layer on a semiconductor wafer Method of doping a polysilicon layer on a semiconductor wafer

1992-05-04

1993-09-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437233, 437934, 437141, 148DIG122, 148DIG123, H01L 21225, H01L 21385

Patent

active

052448312

ABSTRACT:
The present invention concerns a method for doping a polysilicon layer with phosphorous in which phosphorous oxychloride is supplied to the silicon wafer near the beginning of the oven temperature ramping of the silicon wafer. By introducing the phosphorous oxychloride earlier than in prior art methods, the present invention can reduce the poly rho and poly rho sigma of the doped polysilicon layer. Alternatively, the root DT of the diffusion of the doped material in the doped silicon region on the silicon wafer can be reduced, which helps to maintain the junction depth of the doped silicon region.

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Schumacher, J. C., "Dopant Diffusion Guideline For The Process Engineer", Product Application Note No. 11, pp 1-7.

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