METHOD OF DOPING A POLYCRYSTALLINE SILICON LAYER

Details METHOD OF DOPING A POLYCRYSTALLINE SILICON LAYER METHOD OF DOPING A POLYCRYSTALLINE SILICON LAYER

1973-05-30

1976-10-26

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, H01l 734

Patent

active

039881814

ABSTRACT:
An improved wafer type semiconductor may be fabricated by depositing an insulating film layer of predetermined thickness on a semiconductor substrate, preferably of silicon, depositing a substantially pure polycrystalline silicon layer of predetermined thickness on the insulating film layer, and thereafter depositing a doped oxide film layer of predetermined thickness on the substantially pure polycrystalline silicon layer, and effecting diffusion of the dopant into the pure polycrystalline silicon layer whereby a semiconductor wafer with a resistance of several meg-ohms.cm is provided.

REFERENCES:
patent: 3460007 (1969-08-01), Scott
patent: 3646665 (1972-03-01), Kim
patent: 3673679 (1972-07-01), Carbajal et al.
patent: 3690968 (1972-09-01), Fa et al.

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