Method of doping a group III-V compound semiconductor

Details Method of doping a group III-V compound semiconductor Method of doping a group III-V compound semiconductor

1993-06-10

1994-09-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437987, 148DIG34, H01L 21225

Patent

active

053507096

ABSTRACT:
A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.

REFERENCES:
patent: 4824798 (1989-04-01), Burnham et al.
patent: 5047366 (1991-09-01), Murakami
patent: 5126281 (1992-06-01), Carey et al.
patent: 5188978 (1993-02-01), de Souza et al.
Lee et al., "Diffusion Kinetics of Si in GaAs and Related Defect Chemistry". J. Appl. Phys. vol. 68, No. 8, 15 Oct. 1990, pp. 4008-4013.
Guido et al., "Disorder-Defined Buried-Heterostructure Al.sub.x Ga.sub.1-x As-GaAs Quantum Well Lasers by Diffusion of Silicon and Oxygen From Al-Reduced SiO.sub.2 ", (Appl. Phys. Letters, vol. 54, No. 13) Mar. 27, 1989.
Greiner et al.,"Diffusion of Silicon In Gallium Arsenide Using Rapid Thermal Processing: Experiment and Model", (Appl. Phys. Letters, vol. 44, No. 8) Apr. 15, 1984.
Kavanagh et al., "Silicon Diffusion At Polycrystalline-Si/GaAs Interfaces", (Appl. Phys. Letters, vol. 47, No. 11) Dec. 1, 1985.
Sadona et al., "N.sup.+ Doping of Gallium Arsenide by Rapid Thermal Oxidation of a Silicon Cap", (Appl. Phys. Letter 57, vol. 16, No. 16) Oct. 15, 1990.
Burkhardt et al., IBM Technical Disclosure Bulletin-"Diffusion Mask for GaAs", (vol. 14, No. 5) Oct. 5, 1971.

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