Method of doping a body of amorphous semiconductor material by i

Details Method of doping a body of amorphous semiconductor material by i Method of doping a body of amorphous semiconductor material by i

1978-06-16

1979-10-02

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

148187, 357 2, 357 91, H01L 21263, H01L 4500

Patent

active

041697405

ABSTRACT:
To provide for effective doping and obtain substantial conductivity change in amorphous semiconductor material, typically silicon, a body of said material is raised to a temperature above about 20.degree. C. and below the recrystallization temperature, for example in the range of between 100.degree. C., preferably above 200.degree.-250.degree. C. and below about 450.degree. C. during the ion implantation. The doping ions are, for example for silicon, of groups III and V of the periodic system, particularly boron and phosphorus. Semiconductor junctions can be made by this process by selectively doping spatially limited regions of the semiconductor body to thereby produce semiconductor components by doping with ions of different characteristics, for example of different conductivity type.

REFERENCES:
patent: 3533857 (1970-10-01), Mayer et al.
patent: 4004950 (1977-01-01), Baruch et al.
patent: 4064521 (1977-12-01), Carlson
Rehm et al., "Photo . . . of Doped Amorphous Si", Phys. Stat. vol. 79a, (7), 539.
Anderson et al., ". . . B-Implanted Amorphous Ge . . .", Jr. Appl. Phys. 45 (1974) 4528.
Spear et al., ". . . Doped Amorphous Si and Ge", Phil. Mag. 33 (1976), 935.
Muller et al., "Doping of Amorphous Si . . .", Proc. 7th Intn. Conf. Amorphous . . . S/C, Edinburgh, Jun. 27, Jul. 1, 1977.
Muller et al., ". . . Hydrogen . . . Amorphous Si", Proc. 7th Conf. Amorphous . . . S/C. Edinburgh, Jun. 27-Jul. 1, 1977.
Hofker et al., ". . . B-Impln. in Amorphous . . . Si", Radiation Effects, 24 (1975), 223.
Dvurechensky et al., "High Dose Effects . . .", Rad. Effects, 30 (1976), 69.
Brodsky et al., "Doping of . . Amorphous S/C", IBM-TDB, vol. 19, May 1977, 4802.

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