Method of dopant enhancement in an epitaxial silicon layer by us

Details Method of dopant enhancement in an epitaxial silicon layer by us Method of dopant enhancement in an epitaxial silicon layer by us

1990-05-31

1994-05-31

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437106, 437950, 437971, H01L 2120, H01L 21265

Patent

active

053169581

ABSTRACT:
An in-situ doped n-type silicon layer is provided by a low temperature, low pressure chemical vapor deposition process employing a germanium-containing gas in combination with the n-type dopant containing gas to thereby enhance the in-situ incorporation of the n-type dopant into the silicon layer as an electronically active dopant. Also provided are a silicon layer including a P-N junction wherein the layer contains an n-type dopant and germanium, and devices such as transistors incorporating an in-situ n-doped silicon layer.

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