Method of dividing wafer

Semiconductor device manufacturing: process – Semiconductor substrate dicing – With attachment to temporary support or carrier

Reexamination Certificate

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Details

C438S460000, C257SE21599

Reexamination Certificate

active

07666760

ABSTRACT:
A method of dividing a wafer includes: a denatured layer forming step of forming a denatured layer in the inside of the wafer along streets; a first feeding step in which the whole area of the wafer's back-side surface is suction held, and the wafer is mounted on a support base of a tape adhering unit, with the wafer's back-side surface on the upper side; a dicing tape adhering step of adhering a dicing tape to the wafer's back-side surface and an annular frame; a wafer reversing step of reversing the wafer and the annular frame face side back; a second feeding step of feeding said wafer and said annular frame to a tape expanding unit whole holding them by suction; a protective tape peeling step of peeling off a protective tape adhered to the wafer's face-side surface; and a wafer dividing step of expanding the dicing tape so as to divide the wafer along the streets along which the denatured layer has been formed.

REFERENCES:
patent: 2005/0037541 (2005-02-01), Nagasawa et al.
patent: B2 3408805 (2003-05-01), None
patent: A 2004-273895 (2004-09-01), None

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