Method of dividing wafer

Details Method of dividing wafer Method of dividing wafer

2006-01-25

2008-12-02

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C438S708000, C438S709000, C438S719000, C438S725000

Reexamination Certificate

active

07459401

ABSTRACT:
A method of dividing and separating a wafer having a plurality of devices formed on its front surface, which are separated by streets. The method includes applying a resist film coating to a portion of the back surface of the wafer other than an area corresponding to the streets, and plasma etching the area of the back surface corresponding to the streets to divide the wafer into a plurality of individual devices. The thickness of the resist film coating is adjusted in the coating operation to allow the resist film to be completely removed during the plasma etching.

REFERENCES:
patent: 2003/0128802 (2003-07-01), Matsuzawa
patent: 2003/0190770 (2003-10-01), Yeom et al.
patent: 2006/0003551 (2006-01-01), Mancini et al.
patent: 2002-93752 (2002-03-01), None

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