Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2007-02-20
2007-02-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
Reexamination Certificate
active
10849796
ABSTRACT:
A method of dividing a non-metal substrate having a first surface and a second surface formed parallel to the first surface, comprising:a deteriorated layer forming step for forming a deteriorated layer in the inside of the non-metal substrate along dividing lines by applying a laser beam capable of passing through the non-metal substrate from the first surface side with its converging point on the inside thereof; anda deteriorated layer exposing step for exposing the deteriorated layer to the first surface by grinding the first surface side of the non-metal substrate having the deteriorated layer formed therein.
REFERENCES:
patent: 2003/0077880 (2003-04-01), Shinjo et al.
patent: 2002 192367 (2002-07-01), None
Disco Corporation
Harrison Monica D.
Smith , Gambrell & Russell, LLP
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