Method of diffusion into semiconductor wafers

Details Method of diffusion into semiconductor wafers Method of diffusion into semiconductor wafers

1974-02-28

1976-04-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148187, H01L 744

Patent

active

039486966

ABSTRACT:
In diffusing an impurity into semiconductor wafers within a silica tube by the use of a heating furnace, a method of diffusion involves the following steps: the semiconductor wafers are inserted into the tube from an inlet thereof, the inlet is sealed by a cap, the interior of the tube is placed under vacuum, and an atmosphere of the impurity is formed. Since, at heating, the tube is closed and no inert gas is fed thereinto, the temperature distribution within the tube is held uniform, and hence the quantities of impurity introduction into the semiconductor wafers are not varied.

REFERENCES:
patent: 3374125 (1968-03-01), Goldsmith
patent: 3532564 (1970-10-01), Gittler
patent: 3726726 (1973-04-01), Kasabov
patent: 3755017 (1973-08-01), Coughlin
patent: 3804682 (1974-04-01), Keller
Benjamin, I.B.M. Technical Disclosure Bulletin, Vol. 15, No. 2, July 1972, pp. 414 and 415.

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