Method of diffusing zinc into III-V compound semiconductor mater

Details Method of diffusing zinc into III-V compound semiconductor mater Method of diffusing zinc into III-V compound semiconductor mater

1987-10-29

1988-05-03

Ozaki, George T.

Fishing, trapping, and vermin destroying

437169, H01L 21223

Patent

active

047420227

ABSTRACT:
Method of diffusing zinc into gallium arsenide and aluminum gallium arsenide. A wafer of gallium arsenide or aluminum gallium arsenide is placed in close proximity to a quantity of granular zinc gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize zinc whereby zinc diffuses into the gallium arsenide or aluminum gallium arsenide wafer without eroding the surface.

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