Method of diffusing conductivity type imparting material into II

Details Method of diffusing conductivity type imparting material into II Method of diffusing conductivity type imparting material into II

1986-06-26

1988-02-16

Ozaki, George T.

Fishing, trapping, and vermin destroying

H01L 21223

Patent

active

047255650

ABSTRACT:
Method of diffusing sulfur into gallium arsenide without degrading the surface of the gallium arsenide. A gallium arsenide wafer is placed in close proximity to a quantity of powdered gallium sulfide intermixed with powdered gallium arsenide. The assemblage is heated in an open-tube furnace in the presence of flowing nitrogen to vaporize sulfur while the gallium arsenide and gallium sulfide are in thermodynamic equilibrium whereby sulfur diffuses into the gallium arsenide wafer without eroding the surface.

REFERENCES:
patent: 3139362 (1964-06-01), D'Asaro et al.
patent: 3215571 (1965-11-01), Frieser
patent: 3485685 (1969-12-01), Casey, Jr. et al.
patent: 3713910 (1973-01-01), Matino
patent: 3755016 (1973-08-01), Russ et al.
patent: 3984267 (1976-10-01), Craford et al.

Affiliated with

Also associated with

Rating

Method of diffusing conductivity type imparting material into II does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of diffusing conductivity type imparting material into II, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of diffusing conductivity type imparting material into II will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2221147