Method of diffusing an impurity into semiconductor wafers

Details Method of diffusing an impurity into semiconductor wafers Method of diffusing an impurity into semiconductor wafers

1974-02-07

1976-04-06

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148186, 148188, H01L 744

Patent

active

039486958

ABSTRACT:
A method of diffusing an impurity into semiconductor wafers, wherein the semiconductor wafers and sources of the impurity are arranged in a pressure-reduced vessel or a vacuum vessel with their surfaces opposed, and the vessel is heated to deposit the impurity on the surfaces of the semiconductor wafers and to diffuse the impurity into the wafer surfaces in a separate open vessel, whereby the dispersion or variation of the surface impurity concentrations of the semiconductor wafers is lessened.

REFERENCES:
patent: 2956913 (1960-10-01), Mack et al.
patent: 3374125 (1968-03-01), Goldsmith
patent: 3532564 (1970-10-01), Gittler
patent: 3755017 (1973-08-01), Coughlin
Benjamin, I.B.M. Technical Disclosure Bulletin, Vol. 15, No. 2, July 1972, pp. 414 and 415. 189.

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