Method of diffusing aluminum into silicon substrate for manufact

Details Method of diffusing aluminum into silicon substrate for manufact Method of diffusing aluminum into silicon substrate for manufact

1978-08-07

1979-05-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, 148188, H01L 21225

Patent

active

041546326

ABSTRACT:
An aluminum diffusion source layer is formed by vacuum evaporation on a major surface of a silicon substrate. The silicon substrate is heated to form an aluminum-silicon alloy layer, an aluminum doped silicon recrystallization layer and an aluminum diffusion layer. Thereafter, the aluminum-silicon alloy layer is removed from the major surface of the silicon substrate. Drive-in diffusion is performed so as to diffuse, aluminum included in the silicon recrystallization layer and the aluminum diffusion layer, into the silicon substrate. As a result, the aluminum diffusion concentration of 10.sup.16 -10.sup.19 atoms/cm.sup.3 can be obtained.

REFERENCES:
patent: 3895975 (1975-07-01), Lindmayer
patent: 3936319 (1976-02-01), Anthony et al.
patent: 4040878 (1977-08-01), Rowe

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