Method of diffusing aluminum into monocrystalline silicon

Details Method of diffusing aluminum into monocrystalline silicon Method of diffusing aluminum into monocrystalline silicon

1978-11-28

1980-04-22

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148187, H01L 21225

Patent

active

041993861

ABSTRACT:
Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250.degree. C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250.degree. C. and raising the temperature of said structure to between 900.degree. C. and 1300.degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.

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Rai-Choudhury et al., J. Electrochem. Soc., May, 1977, pp. 762-766.
Rosnowski, J. Electrochem. Socl., Jun., 1978, pp. 957-962.

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