Method of diffusing aluminum

Details Method of diffusing aluminum Method of diffusing aluminum

1981-11-16

1983-05-03

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 148190, 148191, H01L 21225

Patent

active

043819575

ABSTRACT:
A method of manufacturing a semiconductor device in which an aluminum-containing layer, hereinafter referred to as the aluminum source, is locally provided on a semiconductor body 1,2 of silicon and, in a subsequent diffusion treatment, aluminum is diffused from the aluminium source 3 into the silicon body 1,2, and an aluminum-doped region 4 is formed in the silicon body 1,2, characterized in that, prior to the diffusion treatment, the aluminum source 3 is divided into parts 5 each having an area which is small as compared with the area of the region 4 to be formed, with a mutual distance which is smaller than double the distance over which the aluminum in the diffusion treatment is diffused laterally into the silicon body 1,2, and which parts 5 have an uninterrupted shape and are so small that during the diffusion treatment their uninterrupted shape remains unvaried.

REFERENCES:
patent: 3375146 (1968-03-01), Wiesner
patent: 3436282 (1969-04-01), Shoda
patent: 3998662 (1976-12-01), Anthony et al.
patent: 4066485 (1978-01-01), Rosnowski et al.
patent: 4290830 (1981-09-01), Mochizuki et al.

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