Method of dicing a wafer

Details Method of dicing a wafer Method of dicing a wafer

2006-10-03

2006-10-03

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C257S678000, C257S787000, C438S710000, C438S795000, C156S235000

Reexamination Certificate

active

07115484

ABSTRACT:
A method of dicing a wafer is disclosed. A wafer with an active surface and a back surface is provided. Prior to dicing the wafer, a removable layer is formed on the back surface of the wafer. The removable layer is attached to a tape, such as a sawing tape. After the wafer is singulated and the adhesion of the removable layer is reduced or removed, the separate chips singulated from the wafer are easily removed from the tape. Because of the removable layer attached on the back surface of the wafer, the cutting stress caused by singulating the wafer will be transferred without concentrated at the back surface of the wafer so as to prevent the wafer from chipping and being warped.

REFERENCES:
patent: 4793883 (1988-12-01), Sheyon et al.
patent: 6175162 (2001-01-01), Kao et al.
patent: 6264535 (2001-07-01), Chang et al.
patent: 6649445 (2003-11-01), Qi et al.
patent: 2001/0005043 (2001-06-01), Nakanishi et al.
patent: 2004/0121611 (2004-06-01), Arita

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