Method of dicing a semiconductor wafer that substantially...

Details Method of dicing a semiconductor wafer that substantially... Method of dicing a semiconductor wafer that substantially...

2006-05-30

2006-05-30

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S460000, C438S736000, C438S703000

Reexamination Certificate

active

07052977

ABSTRACT:
A semiconductor wafer is diced utilizing a method that etches down to the top surface of the semiconductor wafer a number of times, such as during and following the formation of the metal interconnect structure, and then thins the semiconductor wafer from the back side until the semiconductor wafer singulates.

REFERENCES:
patent: 4193836 (1980-03-01), Youmans et al.
patent: 4962061 (1990-10-01), Takata
patent: 5418190 (1995-05-01), Cholewa et al.
patent: 5641714 (1997-06-01), Yamanaka
patent: 6017804 (2000-01-01), Freund et al.
patent: 6074934 (2000-06-01), Dautartas et al.
patent: 6294439 (2001-09-01), Sasaki et al.
patent: 6448153 (2002-09-01), Siniaguine et al.
patent: 6488021 (2002-12-01), Yamane et al.
patent: 6569343 (2003-05-01), Suzuki et al.
patent: 6642127 (2003-11-01), Kumar et al.
patent: 6699774 (2004-03-01), Takyu et al.
patent: 401164046 (1989-06-01), None

Affiliated with

Also associated with

Rating

Method of dicing a semiconductor wafer that substantially... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of dicing a semiconductor wafer that substantially..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of dicing a semiconductor wafer that substantially... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3550663