Method of device isolation using polysilicon pad LOCOS method

Details Method of device isolation using polysilicon pad LOCOS method Method of device isolation using polysilicon pad LOCOS method

1990-03-02

1992-03-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

H01L 2176

Patent

active

050932772

ABSTRACT:
Here is disclosed an improved polysilicon pad LOCOS method. An underlying oxide film is formed on a main surface of a semiconductor substrate. Over the underlying oxide film, polysilicon to be a field oxide film is then deposited. Subsequently, a nitride film is formed on the polysilicon. Thereafter, the nitride film is patterned to leave patterns of a predetermined configuration in an area to be a device region. Using the patterned nitride film as a mask, the polysilicon other than a portion beneath the mask is thermally oxidized to form a field oxide film on the main surface of the semiconductor substrate. The nitride film having served as a mask is then removed to expose the unoxidized polysilicon remaining under the mask. Subsequently, the unoxidized polysilicon is etched away under predetermined conditions which do not allow any etching of the underlying oxide film. According to the present method, it is possible to increase the film thickness of the field oxide film without opening any hole in the surface of the semiconductor substrate. As a result, a highly integrated semiconductor device can be obtained.

REFERENCES:
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patent: 4948461 (1990-08-01), Chatterjee
Han et al., "Isolation Process Using Polysilicon Buffer Layer for Scaled MOS/VLSI," ECS Extended Abstracts, 84-1, Abstract No. 67, p. 90, 1984.
Hoshi et al., "1.0 .mu.m CMOS Process for Highly Stable Tera-Ohm Polysilicon Load 1Mb SRAM," IEEE International Electron Devices Meeting 86, pp. 300-303 (1986).

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