Method of developing and stripping positive photoresist

Details Method of developing and stripping positive photoresist Method of developing and stripping positive photoresist

1975-08-22

1977-04-05

Bowers, Jr., Charles L.

Gas separation: apparatus

Electric field separation apparatus

Electrode cleaner, apparatus part flusher, discharger, or...

96 33, 96 362, 96 363, 96 49, 156643, 156659, G03C 500, G03F 708

Patent

active

040159868

ABSTRACT:
Baked novolak resin based positive photoresists are either developed after exposure or stripped, following the use of the pattern resist layer as an etch mask, in aqueous solutions of a combination of permanganate and phosphoric acid.

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German et al., "J. of Photo Science", vol. 15, pp. 137-144, 5/1967.
Kaplan, "IBM Technical Discl. Bulletin", vol. 13, No. 2, 7/1970.
Kaplan et al., "IBM Technical Discl. Bulletin", vol. 14, No. 10, 3/1972.

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