Method of determining voltage compensation for flash memory...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185220

Reexamination Certificate

active

07440333

ABSTRACT:
The present invention determines or identifies programming variations for different groups within an array or memory device that properly program memory cells within the respective groups. Then, during programming operations for a given memory cell, programming voltages are applied according to the determined or identified programming variations for the group to which the given memory cell belongs. These adjusted programming variations facilitate successful programming of the particular memory cell.

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