Method of determining voltage compensation for flash memory...

Details Method of determining voltage compensation for flash memory... Method of determining voltage compensation for flash memory...

2006-03-07

2006-03-07

Mai, Son (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185190, C365S185240

Reexamination Certificate

active

07009887

ABSTRACT:
The present invention determines or identifies programming variations for different groups within an array or memory device that properly program memory cells within the respective groups. Then, during programming operations for a given memory cell, programming voltages are applied according to the determined or identified programming variations for the group to which the given memory cell belongs. These adjusted programming variations facilitate successful programming of the particular memory cell.

REFERENCES:
patent: 5905674 (1999-05-01), Choi
patent: 6011715 (2000-01-01), Pasotti et al.
patent: 6104640 (2000-08-01), Banks
patent: 6327183 (2001-12-01), Pawletko et al.
patent: 6438031 (2002-08-01), Fastow
patent: 6686632 (2004-02-01), Ogura et al.
patent: 6690058 (2004-02-01), Wu
patent: 6714448 (2004-03-01), Manea
patent: 6768165 (2004-07-01), Eitan

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