Optics: measuring and testing – Of light reflection – By comparison
Patent
1999-05-23
2000-01-11
Kim, Robert H.
Optics: measuring and testing
Of light reflection
By comparison
356445, 356446, G01N 2155
Patent
active
060142235
ABSTRACT:
A method for determining the impurity concentration of impurity-doped polysilicon layers in semiconductor wafers is provided. Through experiments, it is found that the reflectivity of an impurity-doped polysilicon layer is nearly a regular function of the impurity concentration thereof. Accordingly, an impurity-doped polysilicon layer having an unknown impurity concentration can be determined by first measuring the reflectivity thereof by illuminating the impurity-doped polysilicon layer with light, and then using mapping transformation to find the corresponding value of impurity concentration of the impurity-doped polysilicon layer. This method can be used instead of the conventional thermal wave method that often result in having to discard the wafers due to the incapability of reliably determining the impurity concentration of the polysilicon layers formed on the semiconductor wafers.
REFERENCES:
patent: 4564761 (1986-01-01), Buckwald et al.
patent: 5047713 (1991-09-01), Kirino et al.
patent: 5705403 (1998-01-01), Baek et al.
Chen Eddie
Chen Kuen-Chu
Lin Jen-Tsung
Wu Keng-Yuan
Kim Robert H.
United Microelectronics Corp.
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