Chemistry: analytical and immunological testing – Halogen containing
Patent
1983-01-12
1987-05-19
Chin, Peter
Chemistry: analytical and immunological testing
Halogen containing
436172, G01N 2176
Patent
active
046668578
ABSTRACT:
A method of determining the concentration of fluorine in a gas flow is provided, in which the gas flow is passed through a gas discharge space in which fluorine atoms are formed and after leaving the space the formed fluorine atoms in the gas flow are reacted with a substance to emit luminescent radiation and the intensity of the radiation is measured. Elemental silicon is chosen as a material for the substance and is provided so as to be optically separated from the space.
REFERENCES:
Mogab et al., "Plasma Etching of Si and SiO.sub.2 -the Effect of Oxygen Additions to CF.sub.4 Plasmas", J. Appl. Phys., 49(7), Jul. 1978.
Beenakker Cornelis I. M.
Van De Poll Raoul P. J.
Chin Peter
Miller Paul R.
U.S. Philips Corporation
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