Method of determining end of cleaning of semiconductor manufactu

Details Method of determining end of cleaning of semiconductor manufactu Method of determining end of cleaning of semiconductor manufactu

1990-12-07

1992-12-08

Chaudhuri, Olik

Metal working

Barrier layer or semiconductor device making

20429832, 156626, 134 1, H05H 118

Patent

active

051694077

ABSTRACT:
In a method for determining an end of cleaning of a semiconductor manufacturing apparatus according to the invention, when the interior of a semiconductor substrate process chamber of the semiconductor manufacturing apparatus is cleaned by dry etching using plasma discharge, a constant current or voltage is supplied from a high-frequency power source to discharge electrodes during plasma discharge, an impedance between the electrodes or a temperature in the process chamber is monitored, a time point at which the impedance or temperature is abruptly changed is detected, and this time point of detection is determined to be an end of cleaning.

REFERENCES:
patent: 4207137 (1980-06-01), Tretola

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