Method of determining conditions for plasma silicon nitride film

Details Method of determining conditions for plasma silicon nitride film Method of determining conditions for plasma silicon nitride film

1992-11-06

1994-08-02

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437235, H01L 2100, H01L 2102, H01L 21302, H01L 21463

Patent

active

053345550

ABSTRACT:
A silicon nitride film is deposited on a semiconductor substrate in a plasma generated with SiH.sub.4 and nitride gases by the application of high-frequency electric energy. An allowable range of ultraviolet radiation absorption rates of the silicon nitride film, and also an allowable range of inner stresses of the silicon nitride film are established. Levels of both the flow rate of the SiH.sub.4 gas and the high-frequency electric energy are determined so that the silicon nitride film will satisfy the allowable range of ultraviolet radiation absorption rates with a wide margin and the allowable range of inner stresses with a wide margin.

REFERENCES:
patent: 5010024 (1991-04-01), Allen et al.

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