Method of determining an orientation of a crystal lattice of...

X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis

Reexamination Certificate

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C378S073000, C378S076000

Reexamination Certificate

active

07421060

ABSTRACT:
According to an illustrative embodiment disclosed herein, a semiconductor structure comprising a first crystalline substrate and a second crystalline substrate is provided. The semiconductor structure is irradiated with a radiation. Both the first crystalline substrate and the second crystalline substrate are exposed to the radiation. At least one diffraction pattern of a crystal lattice of the first crystalline substrate and a crystal lattice of the second crystalline substrate is measured. A relative orientation of the crystal lattice of the first crystalline substrate and the crystal lattice of the second crystalline substrate is determined from the at least one diffraction pattern.

REFERENCES:
patent: 6977986 (2005-12-01), Beanland et al.

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