Method of detecting metal contaminants in a wet chemical using e

Details Method of detecting metal contaminants in a wet chemical using e Method of detecting metal contaminants in a wet chemical using e

1997-05-13

1999-06-15

Dutton, Brian

Semiconductor device manufacturing: process

With measuring or testing

H01L 2100

Patent

active

059131039

ABSTRACT:
The present invention uses a clean semiconductor substrate, typically in wafer form, and applies to the surface of the semiconductor a wet chemical that is suspected of containing a contaminant. After drying of the wet chemical, a high temperature, low pressure chemical vapor deposition of a semiconductor material is performed. Metal contaminants that exist on the surface of the semiconductor substrate act as seeds to initiate crystal growth of the semiconductor material that is being deposited. Due to the enhanced crystal growth of the semiconductor material at locations corresponding to positions of the metal contaminant on the semiconductor substrate, a visual inspection of the resulting surface of the semiconductor will indicate the presence of a metal contaminant.

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