Method of detecting end point of plasma etching process

Details Method of detecting end point of plasma etching process Method of detecting end point of plasma etching process

2007-02-02

2008-09-23

Pham, Thanh V (Department: 2823)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

C438S009000, C438S709000, C257SE21218, C505S411000, C216S058000, C216S063000, C216S067000

Reexamination Certificate

active

07427519

ABSTRACT:
A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t)] of a number “m” (m≧1) of spectral line(s) of the first etching product in emission spectrum of the plasma and that [Ii=1 to n(t)] of a number “n” (n≧1) of spectral line(s) of the second etching product in the emission spectrum are collected, wherein “m+n≧3” is satisfied. One index ofLm⁡(t)⁡[=∏i=1,j=1n,m⁢⁢Ii⁡(t)Ij⁡(t)],Ls⁡(t)⁡[=∑i=1,j=1n,m⁢⁢Ii⁡(t)Ij⁡(t)],Lm′(t) {=d[Lm(t)]/dt} and Ls′(t) {=d[Ls(t)]/dt} is calculated in real time and plotted with the time. An etching end-point is identified from the plot of the one index with the time.

REFERENCES:
patent: 2006/0273255 (2006-12-01), Volkov et al.
patent: 2007/0027657 (2007-02-01), Pinnegar et al.

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