Method of detecting defect of integrated circuit and apparatus t

Details Method of detecting defect of integrated circuit and apparatus t Method of detecting defect of integrated circuit and apparatus t

1998-05-15

2000-10-24

Metjahic, Safet

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

250310, G01R 31305

Patent

active

061372951

ABSTRACT:
A defect of an integrated circuit is detected by directly observing the operation of an element with an electron beam tester. Portion (1j) including the formation region of an element is removed from an SOI substrate (1s) on which the integrated circuit is formed. The potential change in a diffusion region (1e) is observed by irradiating electron beam from the rear side of the SOI substrate (1s).

REFERENCES:
patent: 4417203 (1983-11-01), Pfeiffer et al.
patent: 4712057 (1987-12-01), Pau
patent: 5821761 (1998-10-01), Shida et al.
patent: 5966019 (1999-10-01), Borden
Peter Ullmann, et al., "A New Robust Backside Flip-Chip Probing Methodology", ISTFA 1996, pp. 1-6, (month unavailable).

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