Method of detecting and repairing latent defects in a semiconduc

Details Method of detecting and repairing latent defects in a semiconduc Method of detecting and repairing latent defects in a semiconduc

1981-08-24

1983-12-13

Thibodeau, Paul J.

Coating processes

Measuring, testing, or indicating

29574, 29575, 427 93, 427 94, 427140, B05D 512, H01L 2100

Patent

active

044204973

ABSTRACT:
Defects in dielectric layers exhibiting low dielectric strength on silicon substrates (11) are deliberately damaged during manufacture to allow their repair by the formation of dielectric plugs (13B). The defects are damaged by the application of an electric field, and are repaired by the selective oxidation or nitridation of the silicon substrate underlying the damaged areas of dielectrics.

REFERENCES:
patent: 3874915 (1975-04-01), Ono et al.
patent: 4302725 (1981-11-01), Nubani

Affiliated with

Also associated with

Rating

Method of detecting and repairing latent defects in a semiconduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of detecting and repairing latent defects in a semiconduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of detecting and repairing latent defects in a semiconduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-804182