Method of detecting and analyzing defective portion of semicondu

Details Method of detecting and analyzing defective portion of semicondu Method of detecting and analyzing defective portion of semicondu

1992-04-10

1995-02-21

Dzierzynski, Paul M.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

2504911, 356237, G01N 2166

Patent

active

053918851

ABSTRACT:
A method of detecting a defective portion of a semiconductor element, includes the steps of: setting a semiconductor element on a stage of an emission microscope; setting a magnification of the emission microscope low and observing a surface of the semiconductor element by the emission microscope while an electric power is supplied to the semiconductor element; storing a positional information of at least one light emission portion of the semiconductor element observed by the emission microscope; moving the stage on the basis of the stored positional information so that one light emission portion is moved to a view center of the emission microscope; increasing the magnification and collecting a light emission image of one light emission portion by the emission microscope; and moving the stage on the basis of the stored positional information so that another light emission portion is moved to the view center so as to collect a light emission image of another light emission portion by the emission microscope.

REFERENCES:
patent: 4659220 (1987-04-01), Bronte et al.
patent: 4755874 (1988-07-01), Esrig et al.
patent: 4811090 (1989-03-01), Khurana
patent: 4872052 (1989-10-01), Liudzius et al.
patent: 5006717 (1991-04-01), Tsutsu et al.
Patent Abstracts of Japan, vol. 13, No. 256 (14 Jun. 1989 & JP-A-10 53 157 (Shiseido) 1 Mar. 1989 Abstract EPO Search Report.
Patent Abstracts of Japan-"Method and Device For Microscope Image Measurement" 1-52113(A). Feb. 1989.

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