Method of detecting a defect in a semiconductor device

Semiconductor device manufacturing: process – With measuring or testing – Packaging or treatment of packaged semiconductor

Reexamination Certificate

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C438S014000, C324S551000

Reexamination Certificate

active

07348190

ABSTRACT:
A method of detecting a defect in a semiconductor device may involve immersing a substrate into a chemical solution. The substrate may support a metal wiring and an insulation layer may cover the metal wiring. The chemical solution may permeate through the defect such as a pinhole and/or a crack (for example) of the insulation layer, and may corrode the metal wiring. The metal wiring may be inspected for corrosion to detect the defect of the insulation layer. The method may be implemented before packaging the semiconductor device.

REFERENCES:
patent: 05-264468 (1993-10-01), None
patent: 11-074493 (1999-03-01), None
patent: 11-248608 (1999-09-01), None
patent: 1997-23948 (1997-05-01), None
patent: 10-2002-0034351 (2002-05-01), None
Korean Office Action dated Feb. 13, 2006 for KR 10-2004-0056864.

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