Metal working – Method of mechanical manufacture – Work holding
Patent
1997-11-14
1999-09-28
Arbes, Carl J.
Metal working
Method of mechanical manufacture
Work holding
361234, 279128, 269 8, 29825, B25B 1100, H02N 1300
Patent
active
059568372
ABSTRACT:
After the release of the application of an attraction voltage to an electrostatic chuck that is attracting a semiconductor wafer, the wafer is pushed upward by lifting pins through only a very small projection distance. Immediately after processing has ended, the temperature of the wafer is several tens of degrees higher than that of the electrostatic chuck so that, if the wafer has detached, the temperature of the rear surface thereof will fall toward the original temperature of the electrostatic chuck. If the wafer has not detached, the temperature thereof will not fall. Therefore, a determination is made as to whether the wafer has detached or whether it is being subjected to residual attraction, based on temperature change data obtained for the wafer in combination with the electrostatic chuck, by a temperature sensor after the wafer has been pushed upward by a very small projection distance. If there is residual attraction, wafer transfer is halted. This makes it possible to prevent damage to the wafer that would occur if an unreasonable force is applied to the wafer by the residual attraction when the wafer is being detached from the electrostatic chuck.
REFERENCES:
patent: 5065495 (1991-11-01), Narushima et al.
patent: 5221450 (1993-06-01), Hattori et al.
patent: 5325261 (1994-06-01), Horwitz
patent: 5436790 (1995-07-01), Blake et al.
patent: 5444597 (1995-08-01), Blake et al.
patent: 5459632 (1995-10-01), Birang et al.
patent: 5474614 (1995-12-01), Robbins
patent: 5491603 (1996-02-01), Birang et al.
patent: 5552955 (1996-09-01), Mashiro et al.
patent: 5612850 (1997-03-01), Birang et al.
patent: 5677824 (1997-10-01), Harashima et al.
patent: 5684669 (1997-11-01), Collins et al.
patent: 5708556 (1998-01-01), Van Os et al.
patent: 5790365 (1998-08-01), Shel
patent: 5793192 (1998-08-01), Kubly et al.
patent: 5812361 (1998-09-01), Jones et al.
Shiota Iku
Tsuboi Kyo
Arbes Carl J.
Preta John
Tokyo Electron Limited
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