Method of detaching a thin film at moderate temperature...

Details Method of detaching a thin film at moderate temperature... Method of detaching a thin film at moderate temperature...

2007-02-13

2007-02-13

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S473000, C438S515000, C438S519000

Reexamination Certificate

active

10703694

ABSTRACT:
A method of detaching a thin film from a source substrate comprises the steps of implanting ions or gaseous species in the source substrate so as to form therein a buried zone weakened by the presence of defects; and splitting in the weakened zone leading to the detachment of the thin film from the source substrate. Two species are implanted of which one is adapted to form defects and the other is adapted to occupy those defects, the detachment being made at a temperature lower than that for which detachment could be obtained with solely the dose of the first species.

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