Method of detaching a layer from a wafer using a localized...

Details Method of detaching a layer from a wafer using a localized... Method of detaching a layer from a wafer using a localized...

2004-01-29

2008-12-16

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S459000, C438S528000, C438S530000, C438S799000

Reexamination Certificate

active

07465645

ABSTRACT:
A method for detaching a layer from a wafer. A weakened zone is created in the wafer to define the layer to be detached and a remainder portion of the wafer, such that the weakened zone includes a main region and a localized super-weakened region that is more weakened than the main region. Detachment of the layer from the remainder portion of the wafer is initiated at the super-weakened region such that the detachment properties to the main region to detach the layer from the remainder portion.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5920764 (1999-07-01), Hanson et al.
patent: 6013563 (2000-01-01), Henley et al.
patent: 6048411 (2000-04-01), Henley et al.
patent: 6100165 (2000-08-01), Sakaguchi et al.
patent: 6150239 (2000-11-01), Goesele et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6413874 (2002-07-01), Sato
patent: 6500732 (2002-12-01), Henley et al.
patent: 6597039 (2003-07-01), Ohmi et al.
patent: 6756286 (2004-06-01), Moriceau et al.
patent: 6828216 (2004-12-01), Schwarzenbach et al.
patent: 6830631 (2004-12-01), Nenyei et al.
patent: 6846718 (2005-01-01), Aga et al.
patent: 6911376 (2005-06-01), Yoo
patent: 2001/0001975 (2001-05-01), Sakaguchi et al.
patent: 2002/0056519 (2002-05-01), Henley et al.
patent: 2002/0102857 (2002-08-01), Sato
patent: 2002/0115264 (2002-08-01), Henley et al.
patent: 2003/0087503 (2003-05-01), Sakaguchi et al.
patent: 2003/0234075 (2003-12-01), Aspar et al.
patent: 2004/0137762 (2004-07-01), Schwarzenbach et al.
patent: 19747164 (1997-10-01), None
patent: 100 08 829 (2001-09-01), None
patent: 0 291 147 (1988-11-01), None
patent: 793 263 (1997-09-01), None
patent: 0793263 (1997-09-01), None
patent: 0 926 713 (1999-06-01), None
patent: 938 129 (1999-08-01), None
patent: 0938129 (1999-08-01), None
patent: 0 948 032 (1999-10-01), None
patent: 0 961 312 (1999-12-01), None
patent: 0 533 551 (2000-08-01), None
patent: 1 045 448 (2000-10-01), None
patent: 1 100 127 (2001-05-01), None
patent: 1 258 909 (2002-11-01), None
patent: 1 256 973 (2004-12-01), None
patent: 2000294754 (2000-10-01), None
patent: WO 99/49501 (1999-09-01), None
patent: WO 01/63002 (2001-08-01), None
patent: WO02/05344 (2002-01-01), None
patent: WO 02/05344 (2002-01-01), None
patent: WO 02/37556 (2002-05-01), None
Chin Teng Lin et al., “Temperature Control Of Rapid Thermal Processing System Using Adaptive Fuzzy Network”, Fuzzy Sets and Systems, vol. 103, pp. 49-65 (1999).

Affiliated with

Also associated with

Rating

Method of detaching a layer from a wafer using a localized... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of detaching a layer from a wafer using a localized..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of detaching a layer from a wafer using a localized... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4032685