Method of designing mask pattern or direct depicting pattern on

Details Method of designing mask pattern or direct depicting pattern on Method of designing mask pattern or direct depicting pattern on

1996-01-22

1997-10-28

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430327, G03F 900

Patent

active

056816740

ABSTRACT:
A method for designing mask patterns or direct depicting patterns using CAD for forming a semiconductor integrated circuit including a plurality of laminated semiconductor layers includes inputting design rules for performing a design rule check (DRC) of n patterns, where n is an integer larger than 2, n mask layers, or n direct depicting patterns for forming n semiconductor layers; editing the input design rules into matrix notation; designing patterns for the n mask layers or n respective semiconductor layers; displaying the designed patterns on a CRT; performing a DRC of the patterns using the design rules edited into the matrix notation; modifying the checked patterns to satisfy the design rules edited into the matrix notation; and outputting the design rules and the modified patterns. The efficiency of the confirmation and setting of the design rules can be enhanced, reducing design mistakes.

REFERENCES:
patent: 5544066 (1996-08-01), Rostoker et al.

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