Method of deposition profile simulation

Details Method of deposition profile simulation Method of deposition profile simulation

1997-08-20

1999-12-28

Teska, Kevin J.

39550023, G06F 1750

Patent

active

060092556

ABSTRACT:
To provide a simulation method of estimating deposition profile of a contact hole with a high-speed, a simulation method of the invention comprises a step of calculating a flux density incident directly from a gas phase onto each surface point of the contact hole making use of an analytical integration, and a step of calculating shape factors for each pair of two surface points of the contact hole describing flux exchange between the two surface point, making use of another analytical integration.

REFERENCES:
patent: 5282140 (1994-01-01), Tazawa et al.
patent: 5580428 (1996-12-01), Krivokapic et al.
patent: 5586230 (1996-12-01), Leon et al.
patent: 5590051 (1996-12-01), Yokozawa
M. M. IslamRaja et al., "A 3-dimensional model for low-pressure chemical-vapor deposition step coverage in trenches and circular vias", Journal of Applied Physics 70(11), Dec. 1, 1991, pp. 7137-7140.
J.J. Hsieh, "Influence of surface-activated reaction kinetics on low-pressure chemical vapor deposition conformality over micro features", Journal of Vacuum Science and Technology A 11(1), Jan./Feb. 1993, pp. 78-86.

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