Method of deposition of silicon in fine crystalline form

Details Method of deposition of silicon in fine crystalline form Method of deposition of silicon in fine crystalline form

1979-07-18

1981-03-10

Cooper, Jack

Coating processes

Electrical product produced

Welding electrode

423349, 423350, 427 86, C01B 3302

Patent

active

042554632

ABSTRACT:
Method of deposition of silicon in fine crystalline form upon a substrate from a silicon-containing reaction gas which includes, at a set mole ratio of the reaction gas and throughput selected for the deposition process, setting the deposition rate-determining temperature of the substrate, at the beginning of deposition, at a temperature lower than optimal temperature for deposition of silicon thereon, maintaining the lower than optimal temperature during a first deposition phase, thereafter raising the temperature of the substrate to the optimal temperature while maintaining the other parameters determining the rate of deposition, and maintaining the optimal temperature for the remainder of the deposition.

REFERENCES:
patent: 3120451 (1964-02-01), Schmidt et al.
patent: 3496037 (1970-02-01), Jackson et al.
patent: 4087571 (1978-05-01), Kamins et al.

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