Method of deposition of silicon carbide layers on substrates and

Details Method of deposition of silicon carbide layers on substrates and Method of deposition of silicon carbide layers on substrates and

1982-03-19

1984-07-10

Childs, Sadie L.

Stock material or miscellaneous articles

Coated or structually defined flake, particle, cell, strand,...

Particulate matter

427215, 427249, 427255, 428218, B32B 516, B32B 900

Patent

active

044593384

ABSTRACT:
A method for direct chemical vapor deposition of silicon carbide to substrates, especially nuclear waste particles, is provided by the thermal decomposition of methylsilane at about 800.degree. C. to 1050.degree. C. when the substrates have been confined within a suitable coating environment.

REFERENCES:
patent: 3382113 (1968-05-01), Ebert et al.
patent: 3386866 (1968-06-01), Ebert et al.
patent: 3736169 (1973-05-01), Graham et al.
Marinare, "Thin Films of a Silicon-Carbon Compound", IBM Tech. Discl. Bulletin, vol. 17, No. 10, Mar. 1975.
Lauf et al., "Characterization of SiC Coatings on HTGR Fuel Particles", Union Carbide Corp., Jan. 1981.

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