Method of depositing wide bandgap amorphous semiconductor materi

Details Method of depositing wide bandgap amorphous semiconductor materi Method of depositing wide bandgap amorphous semiconductor materi

1986-11-24

1987-09-29

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

136258AM, 427 74, H01L 21205

Patent

active

046967028

ABSTRACT:
A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

REFERENCES:
patent: 4451538 (1984-05-01), Tanner
patent: 4459163 (1984-07-01), MacDiarmid et al.
T. Inoue et al., Appl. Phys. Lett., vol. 44, pp. 871-873 (1984).
T. Tanaka et al., Appl. Phys. Lett., vol. 45, pp. 865-867 (1984).
A. E. Delahoy, Proceedings SPIE, vol. 407, pp. 47-54 (1983).
V. L. Dalal et al., Conference Record, 16th IEEE Photovoltaic Specialists Conf. (1982), pp. 1384-1388.
S. S. Hegedus et al., Conference Record, 17th IEEE Photovoltaic Specialists Conf. (1984), pp. 239-244.
M. Hirose, Chapter 3.2 in JARECT, vol. 16, Amorphous Semiconductor Technologies & Dences (1984), Y. Hamakawa, editor, OHMSHA Ltd & North Holland Pub. Co., pp. 67-79.

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