Method of depositing uniformly thick selective epitaxial silicon

Details Method of depositing uniformly thick selective epitaxial silicon Method of depositing uniformly thick selective epitaxial silicon

1985-11-29

1987-10-06

Saba, William G.

Fishing, trapping, and vermin destroying

156612, 156613, 156647, 156657, 156662, 437 64, 437228, H01L 21205, H01L 2176

Patent

active

046983163

ABSTRACT:
A method for depositing monocrystalline silicon at a uniform rate onto a plurality of unequally sized monocrystalline nucleation sites comprises initially providing a substrate having an apertured oxide mask on a major surface thereof. The oxide mask includes a plurality of apertures each of which exposes a nucleation site on the substrate surface. The substrate is then exposed to a mixture of dichlorosilane and hydrogen chloride at 850.degree. C. and a pressure less than approximately 50 torr, for a predetermined time. This yields a monocrystalline silicon island extending from each nucleation site. Each of the islands has a substantially flat profile across the major surface thereof and all islands are equal in thickness.

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