Coating processes – Coating by vapor – gas – or smoke – Base includes an inorganic compound containing silicon or...
Patent
1996-09-19
1998-04-21
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Base includes an inorganic compound containing silicon or...
427255, 427585, 437192, C23C 800
Patent
active
057415463
ABSTRACT:
A chemical vapor deposition method of providing a conformal layer of a titanium nitride atop a semiconductor wafer comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) providing a source of an activated halogen species within the chemical vapor deposition reactor; c) injecting selected quantities of a gaseous titanium organometallic .precursor and a carrier gas to within the reactor having the wafer positioned therein; and d) maintaining the reactor at a pressure of less than or equal to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reaction of the precursor to bond carbon thereof with the activated halogen species and to deposit a film on the wafer which comprises a titanium nitride.
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Beck Shrive
Micro)n Technology, Inc.
Talbot Brian K.
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