Method of depositing titanium dioxide (rutile) as a gate dielect

Details Method of depositing titanium dioxide (rutile) as a gate dielect Method of depositing titanium dioxide (rutile) as a gate dielect

1978-11-20

1980-04-29

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29571, 148187, 357 4, 357 54, 357 23, 423592, 423598, 423610, 427 79, 427 91, 427124, 427250, H01L 21285, H01L 21324

Patent

active

042004748

ABSTRACT:
The invention is embodied in a novel method of forming titanium dioxide layers for metal-insulator-semiconductor device dielectrics. The titanium dioxide of a type known as rutile is formed by the deposition of titanium metal upon a layer of silicon dioxide and oxidation of titanium in an oxygen ambient at high temperatures.

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patent: 3690945 (1972-09-01), Kuisl
patent: 3731163 (1973-05-01), Shuskus
Burkhardt et al., "Post Oxidation Annealing . . . Fixed Charge Levels", I.B.M. Tech. Discl. Bull., vol. 18, No. 3, Aug. 1975, p. 753.
Wang et al., "Vapor Deposition . . . Metal Oxide Thin Films . . . " R.C.A. Review, Dec. 1970, pp. 728-741.
Agusta et al., "Metal--Insulator--Trap--Oxide Semiconductor Memory Cell", I.B.M. Tech Discl. Bull., vol. 13, No. 12, May 1971, p. 3636.
Romankiw, L. T., "Forming MgO on Top of Al.sub.2 O.sub.3 . . . Application" I.B.M. Tech. Discl. Bull. vol. 16, No. 4, Sep. 1973, p. 1094.

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