Coating processes – Direct application of electrical – magnetic – wave – or... – Chemical vapor deposition
Patent
1994-06-30
1996-11-05
Beck, Shrive
Coating processes
Direct application of electrical, magnetic, wave, or...
Chemical vapor deposition
427255, 4272551, C23C 800, C23C 1600
Patent
active
055715729
ABSTRACT:
A chemical vapor deposition method of providing a conformal layer of a titanium carbonitride atop a semiconductor wafer comprises: a) positioning a wafer within a chemical vapor deposition reactor; b) providing a source of an activated halogen species within the chemical vapor deposition reactor; c) injecting selected quantities of a gaseous titanium organometallic precursor and a carrier gas to within the reactor having the wafer positioned therein; and d) maintaining the reactor at a pressure of less than or equal to about 100 Torr and the wafer at a selected elevated temperature which in combination are effective for reaction of the precursor to bond carbon thereof with the activated halogen species and to deposit a film on the wafer which comprises a titanium nitride.
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Katz et al., "The Influence Of Ammonia On Rapid Thermal Low-Pressure Metallorganic Chemical Vapor Depsoited TiNx Films From Tetrakis (dimethylamido) Titanium Precursor Onto InP", Journal of Applied Physics, 71(2), pp. 993-1000, Jan. 15, 1992.
Beck Shrive
Micro)n Technology, Inc.
Talbot Brian K.
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