Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1985-04-22
1986-10-07
Newsome, John H.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 86, C23C 1102
Patent
active
046159053
ABSTRACT:
A method of depositing a semiconductor alloy film onto a substrate by activating groups of free radicals and incorporating desired ones of the activated groups into the film.
REFERENCES:
patent: 4226898 (1980-10-01), Ovshinsky et al.
patent: 4363828 (1982-12-01), Brodsky et al.
patent: 4401054 (1983-08-01), Matsuo et al.
Campbell et al., IBM TDB, vol. 20, No. 10, Mar. 1978, pp. 4184, 4185.
Brodsky et al., IBM TDB, vol. 22, No. 8A, Jan. 1980, pp. 3391, 3392.
Cohen Electronics, vol. 54, No. 22, Nov. 1981, pp. 82, 84.
Aktik et al., J. App. Phys. vol. 53, 1982, pp. 439-441.
Brassard et al., Journal de Physique Colloque C4, Supplement an No. 10, Tome 42, pp. C4-795 to C4-798, Oct. 1981.
Maichiot et al., Journal of Non-Crystalline Solids, vol. 35 and 36, 1980, pp. 207-212.
Currie et al. Proc. National Conf. on Solar Energy, Solar Energy Soc. of Canada Inc., pp. 101-104.
Allred David D.
Hudgens Stephen J.
Ovshinsky Stanford R.
Walter Lee
Citkowski Ronald W.
Newsome John H.
Siskind Marvin S.
Sovonics Solar Systems, Inc.
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